| PART |
Description |
Maker |
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| KSC1173 KSC1173OJ69Z KSC1173YTU |
NPN Epitaxial Silicon Transistor
Low Frequency Power Amplifier Power Regulator
3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FTSO5551 FTSO5550 2N5681 2N5682 |
NPN small signal high voltage general purpose amplifier .
1.0 Amp 10 watt NPN-PNP complementary power.
|
Fairchild Semiconductor
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| 2SC4540 E000959 |
NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SC2882 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications
|
TOSHIBA
|
| 2SC5171 E001055 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3328 E000832 |
From old datasheet system
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| PU3124 PU4124 PU4424 |
V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifier
SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE, POWER AMPLIFIER, SWITCHING
|
Panasonic Semiconductor
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
